Spatially resolved angle resolved photoemission spectroscopy (ARPES)
Our group utilizes ARPES with focused spot size to directly probe the energy-momentum information of mesoscopic sized high-quality single-layer exfoliated 2D materials and their heterostructures and devices. We have an approved program (AP) to probe the electronic band structure of 2D based devices using nanoARPES (with spatial resolution reaching 120 nm) at the state-of-the-art MASTERO beam line at Advanced Light Source (ALS), Berkeley. With the advent of nano-ARPES, the exploration of exotic physical phenomenon in the vast library of emerging 2D materials, van der Waals heterostructures, and devices is just the beginning!!!
Related selected publications:
1) Jyoti Katoch*, Soren Ulstrup*, et. al. "Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures", Nature Physics 14, 355-359 (2018).
2) Roland J. Koch, Jyoti Katoch, et. al. "Electronic structure of exfoliated and epitaxial hexagonal boron nitride", Phys. Rev. Materials 2, 074006 (2018).
3) Soren Ulstrup*, Jyoti Katoch* et. al. "Spatially Resolved Electronic Properties of Single- Layer WS2 on Transition Metal Oxides", ACS Nano 10 (11), pp 10058 - 10067 (2016).